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UNISONIC TECHNOLOGIES CO., LTD TIP42C
PNP EPITAXIAL PLANAR TRANSISTOR
1
PNP PLANAR TRANSISTOR
DESCRIPTION
The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications.
TO-220
FEATURES
* Complement to TIP41C
1 TO - 252
*Pb-free plating product number: TIP42CL
ORDERING INFORMATION
Order Number Normal Lead Free Plating TIP42C-TA3-T TIP42CL-TA3-T TIP42C-TN3-R TIP42CL-TN3-R TIP42C-TN3-T TIP42CL-TN3-T Package TO-220 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Tape Reel Tube
TIP42CL-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating (1) T: Tube, R: Tape Reel (2) TA3: TO-220, TN3: TO-252 (3) L: Lead Free Plating Blank: Pb/Sn ,
www.unisonic.com.tw Copyright (c) 2005 Unisonic Technologies Co., Ltd
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TIP42C
ABSOLUTE MAXIMUM RATING
PARAMETER Collector Base Voltage Collector to Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current SYMBOL VCBO VCEO VEBO IC IC IB
PNP PLANAR TRANSISTOR
RATINGS UNIT -100 V -100 V -5 V -6 A -10 A -2 A TO-220 65 W Collector Dissipation (Tc=25 ) PC 20 W TO-252 Junction Temperature TJ +150 Storage Temperature TSTG -65 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Tc=25 )
PARAMETER Collector Emitter Sustaining Voltage (*) Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage (*) Base-Emitter on Voltage (*) DC Current Gain (*) Current Gain Bandwidth Product * Pulse Test: PW 300s, Duty Cycle 2% SYMBOL BVCEO ICEO ICES IEBO VCE(SAT) VBE(ON) hFE fT TEST CONDITIONS IC=-30mA, IB=0 VCE=-60V, IB=0 VCE=-100V, VEB=0 VBE=-5V, IC=0 IC=-6A, IB=-600mA IC=-6A, VCE=-4V IC=-300mA, VCE=-4V IC=-3A, VCE=-4V VCE=-10V, IC=-500mA, f=1MHz MIN -100 TYP MAX UNIT V -0.7 mA -400 A -1 mA -1.5 V -2.0 V 75 MHz
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UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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TIP42C
TYPICAL CHARACTERISTICS
PNP PLANAR TRANSISTOR
DC Current Gain
Saturation Voltage, VCE(SAT) VBE(SAT)
1000
-2.0 -1.6 -1.2 -0.8 -0.4
Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage IC/I B=10 VBE(SAT)
DC Current Gain, hFE
500 300 100 50 30 10 5 3
VCE=-2V
VCE(SAT)
1 -0.01 -0.03 -0.1 -0.3 -1 -3 -5 -10 Collector Current, I C (A)
0 -0.01 -0.03 -0.1 -0.3 -1 -3 -5-10 -30 -50-100 Collector Current, IC (A)
Power Derating 100
Collector Dissipation, PC (W)
Safe Operating Area -10
Collector Current, IC (A)
0. 5
IC MAX (Pulse)
5m
ms
80 60 40 20
TO-252
-5 -3
s
1m s
TO-220
-1 -0.5 -0.3
0
140 20 40 60 80 100120 160180200 Case Temperature, TC ( )
-0.1 -1
-3 -5 -10 -30 -50 -100 Collector-Emitter Voltage, VCE (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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